050-5629 rev b 11-99 maximum ratings all ratings: t c = 25c unless otherwise specified. unit volts amps volts watts w/c c amps mj unit volts amps ohms ana volts min typ max 100100 0.011 250 1000 100 24 apt10m11 100100 400 3040 520 4.16 -55 to 150 300100 50 2500 apt10m11b2vfr apt10m11lvfr 100v 100a 0.011 characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250a) on state drain current 2 5 (v ds > i d(on) x r ds(on) max, v gs = 10v) drain-source on-state resistance 2 (v gs = 10v, 0.5 i d[cont.] ) zero gate voltage drain current (v ds = v dss , v gs = 0v) zero gate voltage drain current (v ds = 0.8 v dss , v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 2.5ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 5 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 5 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 static electrical characteristics symbol bv dss i d(on) r ds(on) i dss i gss v gs(th) 5 caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com fredfet t-max ? usa 405 s.w. columbia street bend, oregon 97702 -1035 phone: (541) 382-8028 fax: (541) 388-0364 europe chemin de magret f-33700 merignac - france phone: (33) 5 57 92 15 15 fax: (33) 5 56 47 97 61 g d s to-264 b2vfr lvfr power mos v ? is a new generation of high voltage n-channel enhancement mode power mosfets. this new technology minimizes the jfet effect,increases packing density and reduces the on-resistance. power mos v ? also achieves faster switching speeds through optimized gate layout. ? identical specifications: t-max? or to-264 package ? lower leakage ? faster switching ? fast recovery body diode ? 100% avalanche tested downloaded from: http:///
dynamic characteristics apt10m11 b2vfr - lvfr 050-5629 rev b 11-99 z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.30.1 0.050.01 0.0050.001 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm 0.1 single pulse 0.02 0.05 0.2 d=0.5 0.01 source-drain diode ratings and characteristics characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -i d [cont.]) peak diode recovery dv / dt 6 reverse recovery time(i s = -i d [cont.], di / dt = 100a/s) reverse recovery charge(i s = -i d [cont.], di / dt = 100a/s) peak recovery current(i s = -i d [cont.], di / dt = 100a/s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps symbol c iss c oss c rss q g q gs q gd t d (on) t r t d (off) t f characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 0.5 v dss i d = i d [cont.] @ 25 c v gs = 15v v dd = 0.5 v dss i d = i d [cont.] @ 25 c r g = 0.6 min typ max 8600 10300 3200 4480 1180 1770 300 450 95 145 110 165 16 32 33 66 46 70 81 6 unit pf nc ns min typ max 100400 1.3 5 t j = 25 c 220 t j = 125 c 420 t j = 25 c 0.8 t j = 125 c 3.0 t j = 25 c 10 t j = 125 c 18 thermal characteristics symbol r jc r ja min typ max 0.24 40 unit c/w characteristicjunction to case junction to ambient 1 repetitive rating: pulse width limited by maximum t j 4 starting t j = +25 c, l = 500h, r g = 25 , peak i l = 100a 2 pulse test: pulse width < 380 s, duty cycle < 2% 5 the maximum current is limited by lead temperature. 3 see mil-std-750 method 3471 6 i s -i d [cont.], di / dt = 100a/s, v r = 50v, t j 150 c, r g = 2.0 apt reserves the right to change, without notice, the specifications and information contained herein. downloaded from: http:///
v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 2, typical output characteristics figure 3, typical output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, typical transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature ( c) t j , junction temperature ( c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature ( c) t c , case temperature ( c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 0 10 20 30 40 50 0 0.5 1.0 1.5 2.0 2.5 02468 05 0 1 0 0 1 5 0 2 0 0 2 5 0 3 0 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 apt10m11 b2vfr - lvfr i d = 0.5 i d [cont.] v gs = 10v 200160 120 8040 0 1.101.05 1.00 0.95 0.90 0.85 0.80 1.15 1.10 1.05 1.00 0.95 0.90 1.21.1 1.0 0.9 0.8 0.7 0.6 200160 120 8040 0 200160 120 8040 0 120100 8060 40 20 0 2.001.75 1.50 1.25 1.00 0.75 0.50 050-5629 rev b 11-99 v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle v gs =7v, 10v & 15v 6v v gs =10 & 15v v gs =10v v gs =20v t j = +25 c t j = -55 c t j = +125 c t j = +125 c t j = +25 c t j = -55 c 7v 5.5v 4.5v 5v 4v 6v 5.5v 4.5v 5v 4v normalized to v gs = 10v @ 0.5 i d [cont.] downloaded from: http:///
v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, typical capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, typical source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) apt10m11 b2vfr - lvfr t c =+25 c t j =+150 c single pulse 400100 5010 51 2016 12 84 0 050-5629 rev b 11-99 operation here limited by r ds (on) c rss apt's devices are covered by one or more of the following u.s.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 c oss c iss 30,00010,000 5,0001,000 500400 100 5010 51 100s10ms 100ms dc 1ms t j =+150 c t j =+25 c c oss c iss 1 5 10 50 100 .01 .1 1 10 50 0 100 200 300 400 500 0 0.4 0.8 1.2 1.6 2.0 v ds =50v v ds =20v v ds =80v i d = 0.5 i d [cont.] dimensions in millimeters and (inches) dimensions in millimeters and (inches) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016)0.79 (.031) collector emitter gate collector emitter gate collector collector 19.51 (.768)20.50 (.807) 19.81 (.780)21.39 (.842) 25.48 (1.003)26.49 (1.043) 2.29 (.090)2.69 (.106) 0.76 (.030)1.30 (.051) 3.10 (.122)3.48 (.137) 4.60 (.181)5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019)0.84 (.033) 2.29 (.090)2.69 (.106) 5.79 (.228)6.20 (.244) 2.79 (.110)3.18 (.125) 5.45 (.215) bsc 2-plcs. 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 5.45 (.215) bsc 2.87 (.113)3.12 (.123) 2-plcs. to-264 (l) package outline t-max? (b2) package outline these dimensions are equal to the to-247 without the mounting hole. downloaded from: http:///
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